HIGH FREQUENCY THYRISTOR 高频晶闸管
| SYMBOL 参数符号 | CHARACTERISTIC 参数名称 | TEST CONDITIONS 测试条件 | Tj(°C) 结温 | VALUE 参数值 | UNIT 单位 | ||
|---|---|---|---|---|---|---|---|
| Min 最小值 | Type 典型值 | Max 最大值 | |||||
| IT(AV) | Mean on-state current 通态平均电流 | 180°半波正弦 50Hz 双面水冷散热 |
TC=55°C | 125 | — | 480 | A |
| VDRM VRRM |
断态重复峰值电压 反向重复峰值电压 |
脉冲宽度 tp=10ms | 125 | 1100 | — | 1400 | V |
| IDRM IRRM |
断态重复峰值电流 反向重复峰值电流 |
施加VDRM 施加VRRM |
125 | — | — | 30 | mA |
| ITSM | Surge on-state current 浪涌通态电流 | 10ms 半波正弦 | 125 | — | — | 5.8 | kA |
| i²t | i²t 熔断器保护参数 | VR=0.6VRRM | — | — | — | 168 | A²s×10³ |
| VTO | Threshold voltage 阈值电压 | — | 125 | — | 1.67 | — | V |
| rT | On-state slope resistance 通态斜率电阻 | — | 125 | — | 1.32 | — | mΩ |
| VTM | Peak on-state voltage 通态峰值电压 | ITM=600A, 压紧力F=7.0kN | 25 | — | — | 3.20 | V |
| dv/dt | Critical voltage rise rate 临界断态电压上升率 | VDM=0.67VDRM | 125 | — | — | 1000 | V/μs |
| di/dt | Critical current rise rate 临界通态电流上升率 | VDM=67%VDRM 门极脉冲t≤0.5μs IGM=1.5A |
125 | — | — | 1500 | A/μs |
| Qrr | Recovery charge 反向恢复电荷 | ITM=1000A, tp=4000μs, di/dt=-20A/μs, VR=100V | 125 | — | 38 | 50 | μC |
| tq | Circuit commutated turn-off time 电路换相关断时间 | ITM=1000A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs |
125 | 10 | — | 24 | μs |
| IGT | Gate trigger current 门极触发电流 | — | 125 | 30 | — | 200 | mA |
| VGT | Gate trigger voltage 门极触发电压 | VA=12V, IA=1A | 25 | 0.8 | — | 2.5 | V |
| IH | Holding current 维持电流 | — | 25 | 20 | — | 250 | mA |
| IL | Latching current 擎住电流 | — | 25 | — | — | 500 | mA |
| VGD | Non-trigger gate voltage 门极不触发电压 | VDM=67%VDRM | 125 | 0.3 | — | — | V |
| Rth(j-c) | 热阻 结到外壳 | 180°正弦波、双面冷却，压紧力7.0kN | — | — | — | 0.045 | °C /W |
| Rth(c-h) | 热阻 外壳到散热器 | — | — | — | — | 0.010 | °C /W |
| Fm | Mounting force 安装压紧力 | — | — | 5.3 | — | 10 | kN |
| Tvj | Junction temperature 工作结温 | — | — | -40 | — | 125 | °C |
| Tstg | Stored temperature 存储温度 | — | — | -40 | — | 140 | °C |
| Wt | Weight 器件重量 | — | — | — | 80 | — | g |
| Outline | 封装外形 | KT25aT | |||||