Phase Control Thyristor 高压大功率晶闸管
| 完整型号 | Y60KPH-KT54cT60 |
| 通态平均电流 IT(AV) | 1800 A |
| 标准耐压档位 | 1900V ~ 3000V |
| SYMBOL 参数符号 | CHARACTERISTIC 参数名称 | TEST CONDITIONS 测试条件 | Tj(°C) 结温 | VALUE 参数值 | UNIT 单位 | ||
|---|---|---|---|---|---|---|---|
| Min 最小值 | Type 典型值 | Max 最大值 | |||||
| IT(AV) | Mean on-state current 通态平均电流 | 180°半波50Hz，双面水冷，Tc=70°C | 125 | — | — | 1800 | A |
| VDRM VRRM |
断态/反向重复峰值电压 | 脉冲宽度 tp=10ms | 125 | 1900 | — | 3000 | V |
| IDRM IRRM |
断态/反向峰值电流 | 施加额定VDRM/VRRM | 125 | — | — | 120 | mA |
| ITSM | Surge on-state current 浪涌通态电流 | 10ms半波正弦，VR=0.6VRRM | 125 | — | — | 23.6 | kA |
| i²t | i²t for fusing coordination 熔断器匹配参数 | 浪涌工况10ms | 125 | — | — | 2785 | A²s×10³ |
| VTO | Threshold voltage 阈值电压 | Tj=125°C | 125 | — | — | 0.98 | V |
| rT | On-state slope resistance 通态斜率电阻 | — | 125 | — | 0.21 | — | mΩ |
| VTM | Peak on-state voltage 通态峰值电压 | ITM=3000A，压紧力28kN | 25 | — | — | 2.30 | V |
| dv/dt | Critical rate of rise of off-state voltage 临界断态电压上升率 | VDM=0.67VDRM | 125 | — | — | 1000 | V/μs |
| di/dt | Critical rate of rise of on-state current 临界通态电流上升率 | VDM=67%VDRM，门极tr≤0.5μs IGM=1.5A | 125 | — | — | 200 | A/μs |
| Qrr | Recovery charge 反向恢复电荷 | ITM=2000A,tp=2000µs, -di/dt=-20A/µs, VR=50V | 125 | — | 1600 | — | μC |
| IGT | Gate trigger current 门极触发电流 | VA=12V, IA=1A | 25 | 40 | — | 300 | mA |
| VGT | Gate trigger voltage 门极触发电压 | VA=12V, IA=1A | 25 | 0.8 | — | 3.0 | V |
| IH | Holding current 维持电流 | 常温静态测试 | 25 | 20 | — | 300 | mA |
| VGD | Non-trigger gate voltage 门极不触发电压 | VDM=0.67VDRM | 125 | 0.3 | — | — | V |
| Rth(j-c) | Thermal resistance Junction to case 结到外壳热阻 | 180°正弦、双面冷却，压紧力28kN | — | — | — | 0.016 | °C /W |
| Rth(c-h) | Thermal resistance case to heatsink 外壳散热器热阻 | 标准导热硅脂接触面 | — | — | 0.004 | — | °C /W |
| Fm | Mounting force 安装压紧力 | 压接装配标准范围 | — | 21 | — | 30 | kN |
| Tstg | Stored temperature 存储温度 | 无通电静置存放 | — | -40 | — | 140 | °C |
| Wt | Weight 器件重量 | 整机单颗净重 | — | — | 640 | — | g |
| Outline | 封装外形型号 | KT54cT60 | |||||