TECHSEM Y76KFE KF2900A1600V KF2900A1800V KF2900A2000V 非对称快速晶闸管规格书

Features 产品特性

Interdigitated amplifying gates 叉指放大门极结构
Fast turn-on and high di/dt 快速开通、高电流上升率
Low switching losses 开关损耗低

Typical Applications 典型应用

Inductive heating 感应加热设备
Electronic welders 电焊机
Self-commutated inverters 自换相逆变器

SYMBOL 参数符号	CHARACTERISTIC 参数名称	TEST CONDITIONS 测试条件	Tj(°C) 结温	VALUE 参数值	UNIT 单位
I_T(AV)	Mean on-state current 通态平均电流	180°半波正弦 50Hz，双面水冷，Tc=55°C	125	—	—	2800	A
V_DRM	Repetitive peak off-state voltage 断态重复峰值电压	脉冲宽度 tp=10ms	125	1200	—	2000	V
V_RRM	Repetitive peak reverse voltage 反向重复峰值电压	tp=10ms	125	1000	—	1800	V
I_DRM I_RRM	Repetitive peak current 断态/反向峰值电流	施加V_DRM / V_RRM	125	—	—	220	mA
I_TSM	Surge on-state current 浪涌通态电流	10ms半波正弦，V_R=0.6V_RRM	125	—	—	32	kA
i²t	i²t for fusing coordination 熔断器保护参数	—	125	—	—	5120	A²s×10³
V_TO	Threshold voltage 阈值电压	—	125	—	1.05	—	V
r_T	On-state slope resistance 通态斜率电阻	—	125	—	0.11	—	mΩ
V_TM	Peak on-state voltage 通态峰值电压	I_TM=4500A, F=40kN, 15 ≤ tq ≤ 28μs	25	—	—	2.30	V
I_TM=4500A, F=40kN, 29 ≤ tq ≤ 50μs	25	—	2.05	—	V
I_TM=4500A, F=40kN, 51 ≤ tq ≤ 75μs	25	—	1.85	—	V
dv/dt	Critical rate of rise of off-state voltage 临界断态电压上升率	V_DM=0.67V_DRM	125	—	—	1000	V/μs
di/dt	Critical rate of rise of on-state current 临界通态电流上升率	V_DM=67%V_DRM，门极tr≤0.5μs I_GM=1.5A	125	—	—	1500	A/μs
Q_rr	Recovery charge 反向恢复电荷	I_TM=2000A, tp=4000μs, di/dt=-20A/μs, V_R=100V	125	—	820	—	μC
tq	Circuit commutated turn-off time 电路换相关断时间	I_TM=2000A, tp=4000μs, V_R=100V dv/dt=30V/μs ,di/dt=-20A/μs	125	18	—	80	μs
I_GT	Gate trigger current 门极触发电流	V_A=12V, I_A=1A	25	50	—	300	mA
V_GT	Gate trigger voltage 门极触发电压	V_A=12V, I_A=1A	25	0.9	—	3.0	V
I_H	Holding current 维持电流	—	25	20	—	1000	mA
I_L	Latching current 擎住电流	—	25	—	—	1200	mA
V_GD	Non-trigger gate voltage 门极不触发电压	V_DM=67%V_DRM	125	0.25	—	—	V
R_th(j-c)	Thermal resistance Junction to case 结到外壳热阻	180°正弦、双面冷却，压紧力40kN	—	—	—	0.009	°C /W
R_th(c-h)	Thermal resistance case to heatsink 外壳散热器热阻	—	—	—	—	0.0025	°C /W
F_m	Mounting force 安装压紧力	—	—	36	—	48	kN
T_vj	Junction temperature 工作结温	—	—	-40	—	125	°C
T_stg	Stored temperature 存储温度	—	—	-40	—	130	°C
W_t	Weight 器件重量	—	—	—	1080	—	g
Outline	封装外形	KT70cT

SYMBOL 参数符号

CHARACTERISTIC 参数名称

TEST CONDITIONS 测试条件

Tj(°C) 结温

VALUE 参数值

UNIT 单位

Min 最小值

Type 典型值

Max 最大值

I_T(AV)

Mean on-state current 通态平均电流

180°半波正弦 50Hz，双面水冷，Tc=55°C

125

—

2800

V_DRM

Repetitive peak off-state voltage 断态重复峰值电压

脉冲宽度 tp=10ms

125

1200

—

2000

V_RRM

Repetitive peak reverse voltage 反向重复峰值电压

tp=10ms

125

1000

—

1800

I_DRM
I_RRM

Repetitive peak current 断态/反向峰值电流

施加V_DRM / V_RRM

125

—

220

I_TSM

Surge on-state current 浪涌通态电流

10ms半波正弦，V_R=0.6V_RRM

125

—

i²t

i²t for fusing coordination 熔断器保护参数

—

125

—

5120

A²s×10³

V_TO

Threshold voltage 阈值电压

—

125

—

1.05

—

r_T

On-state slope resistance 通态斜率电阻

—

125

—

0.11

—

mΩ

V_TM

Peak on-state voltage 通态峰值电压

I_TM=4500A, F=40kN, 15 ≤ tq ≤ 28μs

—

2.30

I_TM=4500A, F=40kN, 29 ≤ tq ≤ 50μs

—

2.05

—

I_TM=4500A, F=40kN, 51 ≤ tq ≤ 75μs

—

1.85

—

dv/dt

Critical rate of rise of off-state voltage 临界断态电压上升率

V_DM=0.67V_DRM

125

—

1000

V/μs

di/dt

Critical rate of rise of on-state current 临界通态电流上升率

V_DM=67%V_DRM，门极tr≤0.5μs I_GM=1.5A

125

—

1500

A/μs

Q_rr

Recovery charge 反向恢复电荷

I_TM=2000A, tp=4000μs, di/dt=-20A/μs, V_R=100V

125

—

820

—

μC

Circuit commutated turn-off time 电路换相关断时间

I_TM=2000A, tp=4000μs, V_R=100V
dv/dt=30V/μs ,di/dt=-20A/μs

125

—

μs

I_GT

Gate trigger current 门极触发电流

V_A=12V, I_A=1A

—

300

V_GT

Gate trigger voltage 门极触发电压

V_A=12V, I_A=1A

0.9

—

3.0

I_H

Holding current 维持电流

—

1000

I_L

Latching current 擎住电流

—

1200

V_GD

Non-trigger gate voltage 门极不触发电压

V_DM=67%V_DRM

125

0.25

—

R_th(j-c)

Thermal resistance Junction to case 结到外壳热阻

180°正弦、双面冷却，压紧力40kN

—

0.009

°C /W

R_th(c-h)

Thermal resistance case to heatsink 外壳散热器热阻

—

0.0025

°C /W

F_m

Mounting force 安装压紧力

—

T_vj

Junction temperature 工作结温

—

-40

—

125

°C

T_stg

Stored temperature 存储温度

—

-40

—

130

°C

W_t

Weight 器件重量

—

1080

—

Outline

封装外形

KT70cT