TECHSEM Y50KKG KK1000A2500V KK1000A2800V KK1000A3000V 快速晶闸管规格书

Features 产品特性

Interdigitated amplifying gates 叉指放大门极结构
Fast turn-on and high di/dt 快速开通、高电流上升率
Low switching losses 开关损耗低
Short circuit commutated turn-off time 换相关断时间短

Typical Applications 典型应用

Inductive heating 感应加热设备
Electronic welders 电焊机
Self-commutated inverters 自换相逆变器
AC motor speed control 交流电机调速

SYMBOL 参数符号	CHARACTERISTIC 参数名称	TEST CONDITIONS 测试条件	Tj(°C) 结温	VALUE 参数值	UNIT 单位
I_T(AV)	Mean on-state current 通态平均电流	180°半波正弦 50Hz，双面水冷，Tc=55°C	125	—	—	1320	A
V_DRM	Repetitive peak off-state voltage 断态重复峰值电压	脉冲宽度 tp=10ms	125	2000	—	3000	V
V_RRM	Repetitive peak reverse voltage 反向重复峰值电压	tp=10ms	125	900	—	1600	V
I_DRM I_RRM	Repetitive peak current 断态/反向峰值电流	施加V_DRM / V_RRM	125	—	—	70	mA
I_TSM	Surge on-state current 浪涌通态电流	10ms半波正弦，V_R=0.6V_RRM	125	—	—	11.0	kA
i²t	i²t for fusing coordination 熔断器保护参数	—	125	—	—	605	A²s×10³
V_TO	Threshold voltage 阈值电压	—	125	—	1.74	—	V
r_T	On-state slope resistance 通态斜率电阻	—	125	—	0.40	—	mΩ
V_TM	Peak on-state voltage 通态峰值电压	I_TM=1800A, F=25kN, 18 ≤ 35μs	25	—	—	3.08	V
I_TM=1800A, F=25kN, 36 ≤ 58μs	25	—	2.68	—	V
dv/dt	Critical rate of rise of off-state voltage 临界断态电压上升率	V_DM=0.67V_DRM	125	—	—	1000	V/μs
di/dt	Critical rate of rise of on-state current 临界通态电流上升率	V_DM=67%V_DRM，门极tr≤0.5μs I_GM=1.5A	125	—	—	1500	A/μs
Q_rr	Recovery charge 反向恢复电荷	I_TM=1000A, tp=4000μs, di/dt=-20A/μs, V_R=100V	125	—	90	—	μC
tq	Circuit commutated turn-off time 电路换相关断时间	I_TM=1000A, tp=4000μs, V_R=100V dv/dt=30V/μs ,di/dt=-20A/μs	125	22	—	70	μs
I_GT	Gate trigger current 门极触发电流	V_A=12V, I_A=1A	25	40	—	250	mA
V_GT	Gate trigger voltage 门极触发电压	V_A=12V, I_A=1A	25	0.9	—	2.9	V
I_H	Holding current 维持电流	—	25	20	—	520	mA
I_L	Latching current 擎住电流	—	25	—	—	900	mA
V_GD	Non-trigger gate voltage 门极不触发电压	V_DM=67%V_DRM	125	0.3	—	—	V
R_th(j-c)	Thermal resistance Junction to case 结到外壳热阻	180°正弦、双面冷却，压紧力25kN	—	—	—	0.026	°C /W
R_th(c-h)	Thermal resistance case to heatsink 外壳散热器热阻	—	—	—	—	0.006	°C /W
F_m	Mounting force 安装压紧力	—	—	20	—	32	kN
T_vj	Junction temperature 工作结温	—	—	-40	—	125	°C
T_stg	Stored temperature 存储温度	—	—	-40	—	140	°C
W_t	Weight 器件重量	—	—	—	360	—	g
Outline	封装外形	KT42cT

SYMBOL 参数符号

CHARACTERISTIC 参数名称

TEST CONDITIONS 测试条件

Tj(°C) 结温

VALUE 参数值

UNIT 单位

Min 最小值

Type 典型值

Max 最大值

I_T(AV)

Mean on-state current 通态平均电流

180°半波正弦 50Hz，双面水冷，Tc=55°C

125

—

1320

V_DRM

Repetitive peak off-state voltage 断态重复峰值电压

脉冲宽度 tp=10ms

125

2000

—

3000

V_RRM

Repetitive peak reverse voltage 反向重复峰值电压

tp=10ms

125

900

—

1600

I_DRM
I_RRM

Repetitive peak current 断态/反向峰值电流

施加V_DRM / V_RRM

125

—

I_TSM

Surge on-state current 浪涌通态电流

10ms半波正弦，V_R=0.6V_RRM

125

—

11.0

i²t

i²t for fusing coordination 熔断器保护参数

—

125

—

605

A²s×10³

V_TO

Threshold voltage 阈值电压

—

125

—

1.74

—

r_T

On-state slope resistance 通态斜率电阻

—

125

—

0.40

—

mΩ

V_TM

Peak on-state voltage 通态峰值电压

I_TM=1800A, F=25kN, 18 ≤ 35μs

—

3.08

I_TM=1800A, F=25kN, 36 ≤ 58μs

—

2.68

—

dv/dt

Critical rate of rise of off-state voltage 临界断态电压上升率

V_DM=0.67V_DRM

125

—

1000

V/μs

di/dt

Critical rate of rise of on-state current 临界通态电流上升率

V_DM=67%V_DRM，门极tr≤0.5μs I_GM=1.5A

125

—

1500

A/μs

Q_rr

Recovery charge 反向恢复电荷

I_TM=1000A, tp=4000μs, di/dt=-20A/μs, V_R=100V

125

—

μC

Circuit commutated turn-off time 电路换相关断时间

I_TM=1000A, tp=4000μs, V_R=100V
dv/dt=30V/μs ,di/dt=-20A/μs

125

—

μs

I_GT

Gate trigger current 门极触发电流

V_A=12V, I_A=1A

—

250

V_GT

Gate trigger voltage 门极触发电压

V_A=12V, I_A=1A

0.9

—

2.9

I_H

Holding current 维持电流

—

520

I_L

Latching current 擎住电流

—

900

V_GD

Non-trigger gate voltage 门极不触发电压

V_DM=67%V_DRM

125

0.3

—

R_th(j-c)

Thermal resistance Junction to case 结到外壳热阻

180°正弦、双面冷却，压紧力25kN

—

0.026

°C /W

R_th(c-h)

Thermal resistance case to heatsink 外壳散热器热阻

—

0.006

°C /W

F_m

Mounting force 安装压紧力

—

T_vj

Junction temperature 工作结温

—

-40

—

125

°C

T_stg

Stored temperature 存储温度

—

-40

—

140

°C

W_t

Weight 器件重量

—

360

—

Outline

封装外形

KT42cT