Phase Control Thyristor 晶闸管
| 型号 Part No. | H38KPR-KT33dT |
| 通态平均电流 IT(AV) | 350 A |
| 断态/反向电压 VDRM,VRRM | 5600V / 6000V / 6500V |
| SYMBOL 参数符号 | CHARACTERISTIC 参数名称 | TEST CONDITIONS 测试条件 | Tj(°C) 结温 | VALUE 参数值 | UNIT 单位 | ||
|---|---|---|---|---|---|---|---|
| Min 最小值 | Type 典型值 | Max 最大值 | |||||
| IT(AV) | Mean on-state current 通态平均电流 | 180°半波50Hz，双面冷却，Tc=70°C | 125 | — | — | 350 | A |
| VDRM VRRM |
断态/反向重复峰值电压 | 脉冲宽度 tp=10ms | 125 | 5600 | — | 6500 | V |
| IDRM IRRM |
断态/反向峰值漏电流 | 施加额定VDRM/VRRM | 125 | — | — | 150 | mA |
| ITSM | Surge on-state current 浪涌通态电流 | 10ms半波正弦，VR=0.6VRRM | 125 | — | — | 4.5 | kA |
| i²t | i²t for fusing coordination 熔断器匹配参数 | — | — | — | — | 101 | A²s×10³ |
| VTO | Threshold voltage 阈值电压 | — | 125 | — | — | 1.25 | V |
| rT | On-state slope resistance 通态斜率电阻 | — | 125 | — | 2.20 | — | mΩ |
| VTM | Peak on-state voltage 通态峰值电压 | ITM=1000A，压紧力F=15kN | 25 | — | — | 3.50 | V |
| dv/dt | Critical voltage rise rate 临界断态电压上升率 | VDM=0.67VDRM | 125 | — | — | 2000 | V/μs |
| di/dt | Critical current rise rate 临界通态电流上升率 | VDM=67%VDRM，门极tr≤0.5μs，IGM=1.5A | 125 | — | — | 100 | A/μs |
| Qrr | Recovery charge 反向恢复电荷 | ITM=2000A,tp=4000µs,-di/dt=-5A/µs,VR=100V | 125 | — | 2000 | — | μC |
| IGT | Gate trigger current 门极触发电流 | VA=12V, IA=1A | 25 | 40 | — | 300 | mA |
| VGT | Gate trigger voltage 门极触发电压 | VA=12V, IA=1A | 25 | 0.8 | — | 3.0 | V |
| IH | Holding current 维持电流 | — | 25 | 20 | — | 200 | mA |
| IL | Latching current 擎住电流 | — | 25 | — | — | 500 | mA |
| VGD | Non-trigger gate voltage 门极不触发电压 | VDM=0.67VDRM | 125 | 0.3 | — | — | V |
| Rth(j-c) | 结到外壳热阻 | 180°正弦、双面冷却，压紧力15kN | — | — | — | 0.045 | °C /W |
| Rth(c-h) | 外壳散热器热阻 | — | — | — | 0.008 | — | °C /W |
| Fm | Mounting force 安装压紧力 | — | — | 10 | 15 | 20 | kN |
| Tvj | Junction temperature 工作结温 | — | — | -40 | — | 125 | °C |
| Tstg | Stored temperature 存储温度 | — | — | -40 | — | 140 | °C |
| Wt | Weight 器件重量 | — | — | — | 300 | — | g |
| Outline | 封装外形 | KT33dT | |||||