Phase Control Thyristor 晶闸管
| SYMBOL 参数符号 | CHARACTERISTIC 参数名称 | TEST CONDITIONS 测试条件 | Tj(°C) 结温 | VALUE 参数值 | UNIT 单位 | ||
|---|---|---|---|---|---|---|---|
| Min 最小值 | Type 典型值 | Max 最大值 | |||||
| IT(AV) | Mean on-state current 通态平均电流 | 180°半波50Hz，双面冷却，Tc=70°C | 125 | — | — | 530 | A |
| VDRM VRRM |
断态/反向重复峰值电压 | tp=10ms脉冲耐压 | 125 | 1100 | — | 1800 | V |
| IDRM IRRM |
断态/反向峰值漏电流 | 全额定电压测试 | 125 | — | — | 30 | mA |
| ITSM | Surge on-state current 10ms浪涌电流 | 50Hz半波，VR=0.6VRRM | 125 | — | — | 2.5 | kA |
| i²t | i²t for fusing coordination 熔断器匹配参数 | 10ms短路浪涌 | 125 | — | — | 31.25 | A²s×10³ |
| VTO | Threshold voltage 阈值电压 | Tj=125°C静态 | 125 | — | — | 0.89 | V |
| rT | On-state slope resistance 通态斜率电阻 | — | 125 | — | 1.10 | — | mΩ |
| VTM | Peak on-state voltage 通态峰值电压 | ITM=600A，压紧力7.0kN | 25 | — | — | 2.40 | V |
| dv/dt | Critical rate of rise of off-state voltage 临界断态电压上升率 | VDM=0.67VDRM | 125 | — | — | 300 | V/μs |
| di/dt | Critical rate of rise of on-state current 临界开通电流上升率 | 门极tr≤0.5μs IGM=1.5A | 125 | — | — | 100 | A/μs |
| Qrr | Recovery charge 反向恢复电荷 | ITM=1000A,tp=2000µs, -di/dt=-20A/µs, VR=50V | 125 | — | 600 | — | μC |
| IGT | Gate trigger current 门极触发电流 | VA=12V, IA=1A | 25 | 35 | — | 250 | mA |
| VGT | Gate trigger voltage 门极触发电压 | VA=12V, IA=1A | 25 | 0.8 | — | 2.0 | V |
| IH | Holding current 维持电流 | 常温静态测试 | 25 | 20 | — | 150 | mA |
| VGD | Non-trigger gate voltage 门极不触发电压 | VDM=0.67VDRM | 125 | 0.3 | — | — | V |
| Rth(j-c) | Thermal resistance Junction to case 结到外壳热阻 | 180°正弦、双面水冷，压紧力7.0kN | — | — | — | 0.045 | °C /W |
| Rth(c-h) | Thermal resistance case to heatsink 外壳散热器热阻 | 标准导热接触面 | — | — | 0.015 | — | °C /W |
| Fm | Mounting force 安装压紧力 | 标准装配区间 | — | 5.3 | — | 12 | kN |
| Tvj | Junction temperature 工作结温 | 长期连续通电 | — | -40 | — | 140 | °C |
| Tstg | Stored temperature 存储温度 | 器件静置无负载 | — | -40 | — | 140 | °C |
| Wt | Weight 器件净重 | 不含安装配件 | — | — | 85 | — | g |
| Outline | 封装型号 | KA28 | |||||