Phase Control Thyristor 大功率工频晶闸管
| SYMBOL 参数符号 | CHARACTERISTIC 参数名称 | TEST CONDITIONS 测试条件 | Tj(°C) 结温 | VALUE 参数值 | UNIT 单位 | ||
|---|---|---|---|---|---|---|---|
| Min 最小值 | Type 典型值 | Max 最大值 | |||||
| IT(AV) | Mean on-state current 通态平均电流 | 180°半波50Hz，双面水冷Tc=70°C | 125 | — | — | 980 | A |
| VDRM VRRM |
断态/反向重复峰值电压 | tp=10ms脉冲耐压 | 125 | 1400 | — | 3600 | V |
| IDRM IRRM |
断态/反向峰值漏电流 | 额定反向电压高温测试 | 125 | — | — | 198 | mA |
| ITSM | Surge on-state current 10ms浪涌电流 | 50Hz半波 Vr=0.6Vrrm | 125 | — | — | 12.1 | kA |
| i²t | i²t熔断器匹配参数 | 10ms短路浪涌工况 | 125 | — | — | 732 | A²s×10³ |
| VTO | Threshold voltage 阈值电压 | Tj=125°C静态 | 125 | — | 1.16 | 1.25 | V |
| rT | On-state slope resistance 通态斜率电阻 | — | 125 | — | 1.14 | — | mΩ |
| VTM | Peak on-state voltage 通态峰值电压 | ITM=2800A，压紧力27kN | 25 | — | — | 3.12 | V |
| dv/dt | Critical rate of rise of off-state voltage 临界断态电压上升率 | Vdm=0.67Vdrm | 125 | — | — | 1150 | V/μs |
| di/dt | Critical rate of rise of on-state current 临界开通电流上升率 | 门极tr≤0.5μs Igm=1.5A | 125 | — | — | 88 | A/μs |
| IGT | Gate trigger current 门极触发电流 | VA=12V IA=1A，25°C | 25 | 23 | — | 185 | mA |
| VGT | Gate trigger voltage 门极触发电压 | VA=12V IA=1A | 25 | 0.63 | — | 2.45 | V |
| IH | Holding current 维持电流 | 常温静态 | 25 | 10 | — | 110 | mA |
| IL | Latching current 擎住电流 | — | 25 | — | — | 280 | mA |
| VGD | Non-trigger gate voltage 门极不触发电压 | Vdm=0.67Vdrm，Tj=125°C | 125 | 0.3 | — | — | V |
| Rth(j-c) | 结到外壳热阻 | 双面水冷标准压紧27kN | — | — | — | 0.021 | °C /W |
| Fm | Mounting force 安装压紧力 | 标准装配区间 | — | 22 | 27 | 32 | kN |
| Tvj | Junction temperature 工作结温 | 长期连续运行 | — | -40 | — | 125 | °C |
| Tstg | Stored temperature 存储温度 | 器件无负载静置 | — | -40 | — | 140 | °C |
| Wt | Weight 器件净重 | 不含安装配件 | — | — | 485 | — | g |
| Outline | 封装型号 | KT40dT | |||||